| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_941c0785f5349c83d2db660957afd1cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dbdda6936747b754db5ff75a91fc61ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_27cd8fe5833a7a00be217db15560bc71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_43a79f9c8fee921c03ae20db03bdae09 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2011-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61b1442183c5e631b60befc5a953c98a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ef3baa993923c99b879b90e8175273a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab580fe1c3de472406624d87bd621072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_080d22c76e0fa88b2d9053251a9bbfb5 |
| publicationDate |
2013-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013093064-A1 |
| titleOfInvention |
Semiconductor structure and fabrication method thereof |
| abstract |
A semiconductor process includes the following steps. A substrate is provided. A dielectric layer having a high dielectric constant is formed on the substrate, wherein the steps of forming the dielectric layer include: (a) a metallic oxide layer is formed; (b) an annealing process is performed to the metallic oxide layer; and the steps (a) and (b) are performed repeatedly. Otherwise, the present invention further provides a semiconductor structure formed by said semiconductor process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9972694-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9570578-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016233092-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013105907-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043669-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017110552-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110998788-A |
| priorityDate |
2011-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |