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filingDate 2018-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I759461-B
titleOfInvention Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition
abstract Provided herein are atomic layer deposition (ALD) methods of depositing cobalt in a feature. The methods involve two-step surface treatments during an ALD cycle, with one step involving the reaction of a co-reactant gas with an adsorbed cobalt precursor and the other step involving a growth-inhibiting reactant gas on the cobalt surface. The growth-inhibiting reactant gas significantly lowers cobalt growth rate, producing a highly conformal cobalt film. The described ALD processes enable improved controllability in film nucleation, step coverage, and morphology by the separate surface treatment and low process temperature. The methods are applicable to a variety of feature fill applications including the fabrication of metal gate/contact fill in front end of line (FEOL) processes as well as via/line fill in back end of line (BEOL) processes.
priorityDate 2017-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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