| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
2018-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c633fbac8e82f01a241d2d66facd674 |
| publicationDate |
2021-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I725304-B |
| titleOfInvention |
Film forming method |
| abstract |
The object of the present invention is to provide a method for forming a silicon oxide film that does not use hydrogen-containing gas but can stably generate oxygen plasma, and can form a silicon oxide film with good uniformity in the surface of the film.n n n A film forming method for forming a silicon oxide film on the surface of a substrate with a recessed pattern is provided. The method includes: adsorbing aminosilane gas on the surface of the substrate containing the recessed pattern; and supplying an oxidizing gas to the surface of the substrate containing the recessed pattern. The step of oxidizing the aminosilane gas adsorbed on the surface of the substrate on the surface of the substrate of the recessed pattern so that a silicon oxide film layer is deposited on the surface of the substrate containing the recessed pattern; and by The plasma activates the mixed gas containing oxygen, argon, and nitrogen and supplies it to the silicon oxide film layer to perform the process of reforming the silicon oxide film layer. |
| priorityDate |
2017-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |