http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I710760-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59148b5c460776b9c88fb9bfc2cfd36f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9047b16961c0aee78d7de367969339b2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-32 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-62 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-73 |
| filingDate | 2019-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc0e3f14453db810e8921b6204ef4a7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6bf81b8b93ebe80cd41c2c19af9603a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3de9735009c7d7b4dd156f5012ae803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2b1eaa68095b801d8bf8d4526f22a95 |
| publicationDate | 2020-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I710760-B |
| titleOfInvention | Silicon substrate analysis method |
| abstract | A silicon substrate analysis method capable, with high accuracy, of analyzing impurities such as trace metals on a silicon substrate having a thick nitride film formed thereon by ICP-MS. More specifically, the analysis method employs a silicon substrate analysis equipment having a load port, a substrate transfer robot, an aligner, a drying chamber, a vapor- phase decomposition chamber, an analysis scan port having an analysis stage and a substrate analysis nozzle, an analysis solution collector, and an inductively-coupled plasma analyzer. The surface of the silicon substrate is scanned with a recovery solution, which is a mixture of hydrofluoric acid and hydrogen peroxide solution, by use of a substrate analysis nozzle to recover the recovery solution, and thereafter the recovery solution is discharged onto the surface of the silicon substrate, and the substrate is heated and dried. Then a strong acid solution or a strong alkaline solution is discharged onto the surface of the substrate, which is heated and dried, the surface of the silicon substrate is scanned with an analysis solution, the analysis solution is recovered and is analyzed by ICP-MS. |
| priorityDate | 2018-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.