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filingDate 2014-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d09c3886aacf7c8c4d820cfb2d61f54e
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publicationDate 2016-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2016057230-A
titleOfInvention Analysis method of silicon substrate
abstract An object of the present invention is to provide a method for enabling profile analysis of the concentration of an analysis object in the depth direction of the substrate while making it possible to detect an analysis object such as a trace metal contained in a silicon substrate with high sensitivity. The present invention includes an oxide film forming step of supplying an oxygen gas containing ozone to form an oxide film on a silicon substrate surface, and a recovery step of recovering an analysis object using a substrate analysis nozzle. The substrate analysis nozzle is composed of a double pipe and has an exhaust means having an exhaust path between the nozzle body and the outer pipe, and the recovery process is performed between the nozzle body of the substrate analysis nozzle and the outer pipe. The silicon substrate that takes in the analysis target contained in the substrate depth direction by repeating the process one or more times with the oxide film forming step, the recovery step, and the arbitrary drying step as one cycle. It relates to the analysis method. [Selection] Figure 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017116313-A
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priorityDate 2014-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 40.