| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68771
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 |
| filingDate |
2015-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b13b15ae666bc4df8241b6a26b7c4a8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e4a2d06118bcebab55fa0b03a477e64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21fcfbcd1ed8fa4fd394538f5a3cd79e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c633fbac8e82f01a241d2d66facd674 |
| publicationDate |
2019-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I650439-B |
| titleOfInvention |
Substrate processing method and substrate processing device |
| abstract |
A substrate processing method is a process in which a substrate is placed in a processing region that is partitioned to supply an etching gas along a rotation direction of the rotating table, and a processing chamber that supplies the flushing gas without supplying the etching gas The turntable. An etching gas is supplied to the processing region. The flushing gas is supplied to the flushing area. The rotating table is rotated, and when the rotating table is rotated once, the substrate is passed through the processing area and the flushing area once. As the substrate passes through the processing region, the film formed on the surface of the substrate is etched. The etching rate of etching the film or the surface roughness of the film after etching is controlled by changing the rotational speed of the rotating table. |
| priorityDate |
2014-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |