| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-2485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2011-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4a0979b376f798ac33909239383c646
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a951a38a492289161f08a8090329ba68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51e8aaa2ac43d56789084bb7ec4bc89f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_410eb3d7a5082e7ef63f384ddab779cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8fc29bfb0eb0cea816ebb7fd9d616f7 |
| publicationDate |
2018-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I620227-B |
| titleOfInvention |
Plasma processing device and plasma etching method |
| abstract |
The invention provides a plasma processing method and a plasma processing device that can provide a wide range from low microwave power to high microwave power and can ensure a stable process area.nn n n The present invention includes: a processing chamber for generating plasma inside; a plasma generating means for generating the plasma; a sample table for placing wafers provided in the processing chamber; and performing the wafer with the plasma An etched plasma processing device; characterized in that the plasma generating means is provided with a power source for supplying power for generating the plasma, and the on-off peak value is turned on while the on-off modulation of the power of the power source is changed The power is set to a value that does not cause the plasma to be unstable under the condition that the plasma is generated by continuous discharge, and the time average value of the power is controlled by changing the duty ratio of the on / off modulation. |
| priorityDate |
2011-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |