| abstract |
The present invention provides a plasma processing method of conducting plasma processing such as CVD, etching or ashing that can reduce an exhaust time to increase the speed of the entire processing, which method comprises using as a ventilation gas a gas containing at least one component (O2, N2, CF4 or the like) of a plasma processing gas, exhausting the ventilation gas, when a pressure reaches a plasma processing pressure value by the exhaust, introducing the plasma processing gas so as to maintain the plasma processing pressure and starting plasma processing. |