| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_75b765b53e6651e9863a3a35e4c1e164 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-511 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-30 |
| filingDate |
2014-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1705f143977bea07b6d7f15bdf8ab54f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6c491c6d4e879fd98d3c19f4d8c7a03 |
| publicationDate |
2016-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9371582-B2 |
| titleOfInvention |
Method for manufacturing silicon carbide thin film |
| abstract |
A method for manufacturing a silicon carbide thin film comprises steps of: (a) utilizing a mechanical pump to remove gases in a chamber such that the pressure in the chamber is reduced to a base pressure; (b) utilizing a microwave generator to generate microwaves at 1200 W to 1400 W so as to form microwave plasma inside the chamber; and (c) introducing into the chamber a silicon-based compound containing chlorine atoms that serve as a precursor, during the time that the temperature of a substrate disposed in the chamber is stable at 400° C. to 500° C., in which the temperature of the substrate is risen by the microwave plasma without heating the substrate additionally, so as to form a film of cubic silicon carbide on the substrate. In the present invention, the SiC thin film has good crystallinity and is manufactured by using MPECVD in a low temperature process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019133560-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019133561-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019133556-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019133557-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019133558-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019133559-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3514259-A1 |
| priorityDate |
2014-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |