http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-473866-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45591 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509 |
| filingDate | 2000-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0fff766b7a5d0a212d0603dfa4bba65 |
| publicationDate | 2002-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-473866-B |
| titleOfInvention | Plasma CVD apparatus and plasma CVD method |
| abstract | A remote plasma CVD apparatus is disclosed, in which oxygen gas 18 is supplied to a high frequency wave applying electrode 1 to cause reaction of oxygen radicals and oxygen molecules 21 with monosilane gas 19, which is introduced into part of a substrate processing zone R outside oxygen plasma 22. The apparatus comprises a plasma confining electrode 20, which has jetting holes for supplying monosilane gas 19 to the substrate processing zone R. The electrode 20 is spaced apart from a substrate 3 (i.e., deposition substrate) by a distance no longer than about 1,500 λg of the mean free path in the substrate processing zone R at the time of film formation. The member 20 has a hollow structure, and accommodates dispersing plates (i.e., a first and a second dispersing plate) for uniformalizing monosilane gas (i.e., neurtral gas) in it. Thus both of suppression of excessive progress of gas phase chemical reaction and homogeneous film formation in a remote plasma CVD apparatus for forming film by gas phase chemical reaction are realized. |
| priorityDate | 1999-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.