| abstract |
A plasma processing method, which is a plasma processing method for forming STI on a silicon substrate, has:nThe trench formation process uses plasma generated by pulse-modulated high-frequency power to form trenches in the aforementioned silicon substrate; andnThe oxidation process is after the aforementioned trench formation process, only oxygen gas is used to oxidize the aforementioned silicon substrate.nRepeat the aforementioned trench formation process and the aforementioned oxidation process several times. |