http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201906786-A

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filingDate 2018-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23b76f11eb5d512ca88962d4037a1290
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publicationDate 2019-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201906786-A
titleOfInvention Niobium nitride film with high nitrogen content
abstract A method for depositing a higher nitrogen content silicon nitride film is described. Some methods include: exposing the substrate to a silicon nitrogen precursor and an ammonia plasma to form a flowable polymer, and then curing the polymer to form a silicon nitride film. Some methods do not require the use of a UV curing process to cure the flowable polymer. Films produced by the methods described above are also described.
priorityDate 2017-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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