| abstract |
A semiconductor device has a first conductive layer and a second conductive layer. A first portion of the first conductive layer is aligned with a first portion of the second conductive layer. An insulating layer is deposited on the first conductive layer and the second conductive layer. A third conductive layer includes a first portion of the third conductive layer that is vertically aligned with the first portion of the first conductive layer and the first portion of the second conductive layer. An electrical component is disposed on the first conductive layer and the second conductive layer. A sealant is deposited on the first conductive layer, the second conductive layer, and the electrical component. A cutting is performed through the sealant, the first conductive layer, and the second conductive layer. A fourth conductive layer is deposited on the side surfaces of the first conductive layer, the second conductive layer, and the sealant. |