| abstract |
The method MT of one embodiment provides a technique capable of controlling the shape of a pattern during processing of an organic film or the like. The wafer W to which the method MT of one embodiment is applied includes an etched layer EL, an organic film OL, and a mask ALM. The organic film OL is composed of a first region VL1 and a second region VL2. On the first region VL1, the first region VL1 is provided on the second region VL2, and the second region VL2 is provided on the to-be-etched layer EL. The method MT is to generate a plasma containing a gas containing nitrogen in the processing container 12 containing the wafer W, and etch the first region VL1 until reaching the second region VL2. A mask OLM1 is formed from the first region VL1, and the mask The side surface SF of OLM1 is conformally formed with a protective film SX, and the second region VL2 is etched until it reaches the etched layer EL, and a mask OLM2 is formed from the second region VL2. |