| abstract |
The invention provides a method for processing an object to protect a mask and avoid distortion of the mask caused by a protective film for protecting the mask. In one embodiment, the wafer W includes an etched layer EL and a mask MK4 provided on the etched layer EL; the method MT of one embodiment repeats the procedure SQ3 including the following steps: step ST9a, generating a plasma, Apply a DC voltage to the upper electrode 30 of the parallel plate electrode to irradiate the secondary electrons, and cover the mask MK4 with a silicon oxide compound; Step ST9b, a plasma of a fluorocarbon-based gas is generated, and an atomic layer on the surface of the EL layer to be etched Forming a mixed layer MX2 containing radicals; and ST9d, generating a plasma of Ar gas, applying a bias voltage to remove the mixed layer MX2; by repeating the procedure SQ3, the etched layer EL is removed atomically, and the etching is etched Layer EL. |