| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0fa3ca2c9e92a92d9079a47a3d42b12e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4401 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2017-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50d17d0b26dce3fa418a63664be6ba9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f026232a05a64d1b97ba39a401a6916
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1e394d6ef3f83deb06e9a65fad1d4ac |
| publicationDate |
2017-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201741493-A |
| titleOfInvention |
Plasma-assisted atomic layer deposition method with reduced quartz-based pollutants |
| abstract |
A method of performing plasma-assisted atomic layer deposition with reduced quartz-based contaminants on a substrate is disclosed herein. The method is embodied in a quartz plasma tube inductively forming a hydrogen-based plasma from a supply gas, the supply gas consisting essentially of hydrogen and nitrogen or hydrogen, argon and nitrogen. Nitrogen constitutes no more than 2 vol% of supply gas. Hydrogen-based plasmas contain one or more reactive species. One or more reactive species in the hydrogen-based plasma are directed to the substrate to cause the one or more reactive species to react with one of the initial membranes on the substrate. A small amount of nitrogen can be used to reduce quartz-based contaminants in the initial film compared to the use of nitrogen in the supply gas. |
| priorityDate |
2016-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |