| abstract |
A semiconductor structure comprising: a through via; a molding surrounding the through via; a dielectric layer disposed over the die, the through via and the molding; and a conductive component disposed on The dielectric layer is disposed above the through via and electrically connected to the through via, wherein the conductive component comprises a first protruding portion and a second protruding portion, and the first protruding portion is on a first length Extending laterally from the through passage along a first direction, and the second protruding portion laterally protrudes from the through passage along a second direction on a second length, and the first direction is substantially orthogonal to the first Two directions, and the first length is substantially greater than the second length. |