| abstract |
Methods for forming semiconductor components, such as FinFET components, are provided. An epitaxial film is formed on the semiconductor fin, and the epitaxial film may include a top surface and a bottom surface, the top surface has two facets, and the bottom surface includes two facets. A capping layer is deposited on the top surface and the portion of the epitaxial film is removed laterally by an isotropic plasma etching process. To maximize the amount of free radicals in the plasma while minimizing the amount of ions in the plasma, an isotropic plasma etch process can be performed at pressures ranging from about 5 mTorr to about 200 mTorr. The smaller lateral dimension prevents the epitaxial film from merging with the adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film. |