| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32513 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505 |
| filingDate |
2015-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca78dc6711c45b55afd2391a4544809c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc253be45b5b6d827030131b8cac783b |
| publicationDate |
2016-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201635334-A |
| titleOfInvention |
Deposition technique for sidewall passivation layer for high aspect ratio cylindrical etching |
| abstract |
Various embodiments herein relate to methods, apparatus, and systems for forming recessed features in a dielectric material on a substrate. Separate etching and deposition operations are used in a cyclic manner. Each etch operation partially etches the features. Each deposition operation forms a protective coating on the sidewalls of the features to prevent lateral etching of the dielectric material during the etching operation. The protective coating can be deposited using methods that result in substantial protection of the mask layer on the substrate. The protective coating can be deposited using special reactants and/or reaction conditions that are unlikely to damage the mask layer. The protective coating can also be deposited using a special reaction mechanism that results in a substantially complete sidewall coating. In some cases, the protective coating is deposited using plasma assisted atomic layer deposition, modified plasma assisted atomic layer deposition, or plasma assisted chemical vapor deposition. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I716125-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108735596-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108735596-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I732440-B |
| priorityDate |
2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |