| abstract |
The present invention provides methods and precursors for forming tantalum nitride films. In some embodiments, tantalum nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, the deposited tantalum nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments, the hafnium precursor used to deposit tantalum nitride includes an iodine ligand. The tantalum nitride film can have a relatively uniform etch rate on both the vertical and horizontal portions when deposited onto a three-dimensional structure such as a FinFET or other type of multiple gate FET. In some embodiments, the etch rate of various inventive tantalum nitride films is less than half the rate of thermal oxide removal using diluted HF (0.5%). In some embodiments, a method for depositing a tantalum nitride film includes a multi-step plasma process. |