http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201441413-A

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filingDate 2013-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2d3640a9de1b8f047673b310bbefeb7
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publicationDate 2014-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201441413-A
titleOfInvention Film forming apparatus, substrate processing apparatus, and film forming method
abstract The film forming apparatus configured to form a film on the substrate in a vacuum container includes a rotating table configured to revolve the substrate mounting region on which the substrate is placed; The region includes a processing gas supply unit configured to supply a processing gas to the substrate mounting region, and a layer of a molecular layer or an atomic layer is sequentially formed on the substrate in accordance with rotation of the rotating table to form a thin film; The slurry processing unit is a plasma generating region that is separated from the film forming region in the rotation direction of the rotating table, and is formed by using a plasma generated by plasma formation of a plasma generating gas. The atomic layer is subjected to a reforming process; the lower bias electrode is disposed on the lower surface side with respect to the height position of the substrate on the rotating table in order to pull the ions in the plasma to the surface of the substrate; the upper bias electrode a height position at the same height position or an upper side with respect to the height position; a high frequency power supply portion connected to the lower side bias electrode and the upper side bias electrode a lesser one for causing the lower bias electrode and the upper bias electrode to form a capacitive coupling via the plasma generating region to form a bias potential on the substrate; and an exhaust mechanism for the vacuum container Exhaust.
priorityDate 2012-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 41.