| abstract |
A semiconductor device manufacturing method comprises: a step which forms a first layer upon a substrate, which includes a prescribed chemical element, nitrogen atoms, and carbon atoms, by alternately carrying out, in a prescribed number of iterations, a step which supplies a first raw material which includes a prescribed chemical element and a halogen group to a substrate within a processing chamber, and a step which supplies a second raw material which includes a prescribed chemical element and an amino group to a substrate within a processing chamber; a step which oxidizes the first layer and forms a second layer by supplying either an oxygen-containing gas or an oxygen-containing gas and a hydrogen-containing gas to a substrate within a processing chamber; and a step which forms either an OCN film, a CO film, or an O film, which include a prescribed element, upon a substrate, by alternately carrying out the preceding steps in a prescribed number of iterations. |