| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c1e49aee5e8b4d0893942406354c171 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01073
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-014
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04105
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05571
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-568
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
2011-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c98e6e697365df79e0a5099625f3cc63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd59359c2e394d39eec8e236f297dfde
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_543bdab38221a298514f25c2a4fc60a9 |
| publicationDate |
2012-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201214590-A |
| titleOfInvention |
Semiconductor device and method of forming bond-on-lead interconnection for mounting semiconductor die in FO-WLCSP |
| abstract |
A semiconductor die has a conductive layer including a plurality of trace lines formed over a carrier. The conductive layer includes a plurality of contact pads electrically continuous with the trace lines. A semiconductor die has a plurality of contact pads and bumps formed over the contact pads. A plurality of conductive pillars can be formed over the contact pads of the semiconductor die. The bumps are formed over the conductive pillars. The semiconductor die is mounted to the conductive layer with the bumps directly bonded to an end portion of the trace lines to provide a fine pitch interconnect. An encapsulant is deposited over the semiconductor die and conductive layer. The conductive layer contains wettable material to reduce die shifting during encapsulation. The carrier is removed. An interconnect structure is formed over the encapsulant and semiconductor die. An insulating layer can be formed over the conductive layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I471898-B |
| priorityDate |
2010-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |