| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
1993-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1994-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-940006214-A |
| titleOfInvention |
Deposition method of ozone / tetraethoxysilane silicon oxide with reduced surface selectivity |
| abstract |
The method of the present invention for depositing a defect free silicon oxide film on a stepped topography comprises depositing a first silicon oxide film source layer doped with nitrogen from a plasma of tetraethoxysilane and nitrogen containing gas, E. The step of depositing a silicon oxide film from a mixture of tetraethoxy silane, ozone and oxygen at low temperature, thereby making it possible to produce a silicon oxide film having improved properties. |
| priorityDate |
1992-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |