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filingDate 2019-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20220019047-A
titleOfInvention Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus and program
abstract (a) supplying a pseudo catalyst to the substrate in the processing chamber; (b) discharging the pseudo catalyst remaining in the processing chamber; (c) supplying a raw material to the substrate in the processing chamber; (d) processing chamber a cycle including a step of discharging the raw material remaining therein is performed a predetermined number of times to form a film to fill the inside of the recess formed on the surface of the substrate; The pseudo-catalyst is adsorbed on the surface of the substrate under the condition that the adsorption becomes unsaturated.
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