http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190136588-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b227bb4a6bb2e4a298835c360545fe9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02C20-30 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate | 2018-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cc1ff9dd54f137fa532c7c622d2f9f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f084f0e88e810866d94df0760090a8c |
| publicationDate | 2019-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20190136588-A |
| titleOfInvention | Semiconductor Device Manufacturing System with recoverable Fluorocarbon-based Precursor |
| abstract | The present invention relates to a system for manufacturing a semiconductor device using a fluorocarbon precursor, comprising: a chamber (10) for generating a plasma for etching or surface treatment of a wafer; A turbo pump 20 installed at one side of the chamber 10 to make the inside of the chamber 10 in a high vacuum state; A dry pump 30 connected to the turbo pump 20 through the first flow path L1 to assist vacuum pumping of the turbo pump 20; A membrane filter 40 installed on the first flow path L1 and separating and recovering the process gas discharged from the chamber 10 by the turbo pump 20; It includes, and the process gas supplied to the chamber 10 is characterized in that a fluorocarbon precursor is used. In addition, the present invention provides a system for manufacturing a semiconductor device using a fluorocarbon precursor, characterized in that the liquid nitrogen adsorption portion 41 is added in place of the membrane filter (40). In addition, in the present invention, the fluorocarbon precursor, which is a process gas supplied to the chamber 10, has a structure of CnHrFm, and a bonding ratio (n: m) of C (carbon) and F (fluorine) is 1: 1 to 1: 3. Provided is a system for manufacturing a semiconductor device using a fluorocarbon precursor, which is characterized in that it is a fluorocarbon precursor formed within a range. According to the above configuration, the present invention can separate and recover the process gas used through the membrane from the exhaust gas while using a fluorocarbon precursor having a low global warming index (GWP) as the process gas. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220108862-A |
| priorityDate | 2018-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.