http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101522277-B1

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filingDate 2014-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f2a83460eb3139328c5b21952bfcea7
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publicationDate 2015-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101522277-B1
titleOfInvention Removal Method of Nitrous Oxide Gas from Semiconductor Exhausted Gas with Catalytic Reactior
abstract The present invention relates to a method of manufacturing a semiconductor or a display device using a catalytic reactor including a zeolite catalyst impregnated with iron ions and a method of manufacturing a semiconductor or a display device using a large amount of fluorine gas, The present invention relates to a method for efficiently removing nitrous oxide by selectively injecting a reducing agent according to the amount of nitrous oxide contained in discharged exhaust gas and controlling supply conditions to the catalytic reactor. Specifically, the method includes: a first step of measuring the concentration of nitrous oxide in a semiconductor process exhaust gas; And (2-1) a decomposition reaction of nitrous oxide is performed in the catalytic reactor when the concentration of the nitrous oxide measured in the first step is less than 200 ppm. Or when the concentration of the nitrous oxide measured in the second step is 200 ppm or more, the exhaust gas is supplied to the catalytic reactor and simultaneously the ammonia gas as the reducing agent is supplied to decompose and reduce the nitrous oxide in the catalytic reactor The concentration of nitrous oxide in the exhaust gas is monitored in advance or continuously so that the decomposition conditions of the exhaust gas are appropriately changed according to the concentration level of nitrous oxide, And the removal unit can be economically operated at the same time.
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