| abstract |
It is possible to suppress generation of voids at the interface between the first film and the second film even when the first layer contains an impurity which reacts with the material of the second layer to form a vaporizable substance when the first layer and the second layer are laminated A method for manufacturing a semiconductor device is provided. A step of subjecting the first layer (tungsten film 221) formed on the substrate 220 to heat treatment to remove impurities contained in the first layer; and a step of forming, on the first layer, Forming a second layer (a silicon oxide film 224) containing a component on which a possible material is to be formed. |