| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_517a04cc4bffc3d216b19f45c9bde10d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate |
2017-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9651b7b2b538d7220e91da39ca6fd33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be5a9ab548d35c06af025f97eb82ef52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14256f1f16e3129ed05fc01ee6e17e97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59d97019161a1489b29b266117c23de7 |
| publicationDate |
2019-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190040743-A |
| titleOfInvention |
Etching composition for silicon nitride layer |
| abstract |
The silicon nitride film etching composition of the present invention can selectively etch a silicon nitride film as compared to a silicon oxide film and has an excellent etching selectivity ratio and a change in etch rate and etch selectivity to a silicon nitride film There is practically no excellent effect. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021112932-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114269884-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11421157-B2 |
| priorityDate |
2017-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |