Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f517051dd4d265e5e931724f45b34ddc |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-24 |
filingDate |
2010-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f27efe57a54f6326f5206a0df2db426 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e968e45e42b8a542bdfc50b0188aafe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8f522422bf444362d31b147a0f0a547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c994b64a89e7bec1979715db47681c14 |
publicationDate |
2012-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20120077676-A |
titleOfInvention |
Silicon Nitride Etch Composition |
abstract |
The present invention relates to a wet etching composition of a silicon nitride film. Specifically, in etching a silicon nitride film or a silicon oxide film in a semiconductor process, the etching rate is kept constant without affecting the selectivity of the silicon nitride film and the silicon oxide film even after long-term use. The present invention relates to a wet etching composition comprising a phosphorus compound and an ammonium compound. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200025887-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101380487-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180122141-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9868902-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190040743-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190075670-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10465112-B2 |
priorityDate |
2010-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |