| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ffefa3b348d867233c8fad95c6db46ef |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate |
2017-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c25c4bff3ac9fc37e3166dc33383e312 |
| publicationDate |
2017-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101769348-B1 |
| titleOfInvention |
A Composition for Wet Etching to Silicon Nitride |
| abstract |
The present invention relates to a composition for etching a silicon nitride film, which comprises a phosphoric acid (H 3 PO 4 ), a selenium compound, and water and which maintains an etching rate constant by suppressing a change in an etching rate occurring during the etching process, To a composition for etching a silicon nitride film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190040743-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102450687-B1 |
| priorityDate |
2017-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |