| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-515
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
| filingDate |
2016-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d7a1370c89e977d322b602dd0742c3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_236bb726f40b41f3fb8a8743eed6c796
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b60da258f706fdd2661f23e000b1d77e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7535312ace812d59831a879fcfec0323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1109f8451055e0518f878a8fbfd57be9 |
| publicationDate |
2018-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180044432-A |
| titleOfInvention |
Low-temperature conformal deposition of silicon nitride on high aspect ratio structures |
| abstract |
The embodiments described herein generally relate to methods for forming a conformal silicon nitride layer at low temperatures. The conformal silicon nitride layer may be formed by pulsing radio frequency (RF) power into the processing chamber while a gaseous mixture comprising trisilylamine is flowing into the processing chamber. The pulsed RF power increases the ratio of neutral counter ion species, and the activated species of trisilylamine has low tack coefficients and greater surface movement. As a result, the conformality of the deposited silicon nitride layer is improved. |
| priorityDate |
2015-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |