| abstract |
A semiconductor manufacturing method is disclosed. The method includes the step of accommodating a device having a first surface, through which an oxide of a first metal or a first metal is exposed. The method includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in the first portion of the dielectric film than the second portion of the dielectric film . A first portion of the dielectric film is near the first surface and a second portion of the dielectric film is located farther from the first surface than the first portion. The method further includes forming a conductive feature on the dielectric film. The dielectric film electrically isolates the conductive features from the first metal or oxides of the first metal. |