| abstract |
An embodiment includes forming a first passive device in a first wafer, forming a first dielectric layer on a first side of a first wafer, forming a first plurality of bond pads in a first dielectric layer, Planarizing the first dielectric layer and the first plurality of bond pads so that the top surface of the first dielectric layer and the first plurality of bond pads are at the same height as each other, Hybrid bonding the first device die to the first dielectric layer with at least a portion of a plurality of bond pads of the first device die; and sealing the first device die with the first sealant. |