| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_985f1bf0df4204078e687f8417dc5871 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2016-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca9ee52a99354fb6fc0bb44362248889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f2ae6a1e17a448d92ecd632eb3aaaf3 |
| publicationDate |
2018-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180021294-A |
| titleOfInvention |
Substrate treating method |
| abstract |
The present invention relates to a substrate processing method. According to an embodiment of the present invention, there is provided a method of processing a substrate, comprising: supplying a first process gas excited to a plasma state to a substrate to form a protective layer on a polysilicon layer formed on the substrate; And supplying a second process gas excited to the plasma state to the substrate to etch the oxide layer in the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200059419-A |
| priorityDate |
2016-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |