| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98a75c9fff239084cf3c988c59841957 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
2017-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_837e82748fff84c779b073259f88957e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_371bfb2c96743a0f770a156d9e583bff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_188defd48490e70eee1f39ee7ae27955
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_710a808162615492ebe7204b9461cd3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc08a0a245241c2fac9367e0ff3a6b62 |
| publicationDate |
2017-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170087425-A |
| titleOfInvention |
High temperature atomic layer deposition of silicon-containing films |
| abstract |
Methods and compositions are provided for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 650 < 0 > C or more. In one aspect, providing a substrate to a reactor; Introducing into the reactor at least one halidosiloxane precursor selected from the group of compounds having formula (I) and formula (II) as described herein; Purging the reactor with a purge gas; Introducing an oxygen source into the reactor; And purging the reactor with a purge gas, wherein the steps are repeated to deposit a silicon oxide film or material that is repeated until a desired thickness of silicon oxide is deposited, wherein the process is performed at a temperature in the range of about 650 to 1000 < 0 & A method is provided that is performed at one or more temperatures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020033172-A1 |
| priorityDate |
2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |