| abstract |
Described herein are precursors and methods for forming silicon-containing films. In one embodiment, an aza-polysilane containing two or more Si-N bonds, one or more Si-Si bonds, and two or more SiH 2 groups represented by the following formulas (IA), (IB), and A precursor is provided: In this formula, R 1 and R 2 are independently a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C A C 3 to C 10 hetero-aryl group, a C 2 to C 10 alkyl group, a C 3 to C 10 hetero-cyclic alkyl group, a C 5 to C 10 aryl group, a C 3 to C 10 hetero- A dialkylamino group, and a C 3 to C 10 cyclic alkylamino group; R 3 and R 4 are independently hydrogen, linear or branched C 1 to C 10 alkyl group, a linear or branched C 2 to C 10 alkenyl group, a linear or branched C 2 to C 10 alkynyl groups, C 3 To C 10 cyclic alkyl groups, C 3 to C 10 hetero-cyclic alkyl groups, C 5 to C 10 aryl groups, C 3 to C 10 hetero-aryl groups, C 2 to C 10 A dialkylamino group, and a C 3 to C 10 cyclic alkylamino group; It is not R 1 is both in the general formula (IA) may be methyl, the R 1 and R 2 are both in the general formula (IB) iso-propyl, tert-can not imidazol-butyl, and benje, R 3 and R 4 can not both be methyl and phenyl. |