| abstract |
Composition(s) and atomic layer deposition (ALD) process(es) for the formation of a silicon oxide containing film at one or more deposition temperature of about 500° C. is disclosed. In one aspect, the composition and process use one or more silicon precursors selected from compounds having the following formulae I, II, described and combinations thereof n R 1 R 2 m Si(NR 3 R 4 ) n X p ; and I.n n R 1 R 2 m Si(OR 3 ) n (OR 4 ) q X p . II |