| abstract |
A method of manufacturing a semiconductor device, comprising: forming a trench above a semiconductor substrate; A siloxane composition is applied to fill the trenches on the semiconductor substrate to form a pre-buried insulating film. The preliminarily buried insulating film is converted into a buried insulating film containing polysiloxane through a low temperature curing process performed at a temperature of about 50 ° C to about 150 ° C. The buried insulating film is planarized to form an element isolation film. |