http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011082236-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G65-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2009-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cae1ada8c4a1cb995f85e11f867aecb7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f0d7b774dce0fe1491977f4b9add11b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d156c42a944003019b6572839fe186eb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e30511d91c507ee032d8867ae76d180d |
| publicationDate | 2011-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011082236-A |
| titleOfInvention | Method for planarizing a semiconductor substrate |
| abstract | PROBLEM TO BE SOLVED: To provide a method for flattening an insulating film surface and a semiconductor substrate surface in a shallow trench. A method of manufacturing a semiconductor device in which element isolation is performed by fine trench isolation, a first step of forming a trench for fine trench isolation on a semiconductor device substrate, and a CVD method over the entire surface of the semiconductor substrate. Alternatively, a second step of forming an insulating film using SOG to fill the trench for fine trench isolation and depositing the insulating film on the entire substrate, and a polymerizable compound (A) having a polymerizable group , A third step of forming a coating film on the insulating film with a coating composition containing a photopolymerization initiator (B) and a solvent (C); a fourth step of curing the coating film; The coating film and the insulating film existing outside the trench for trench isolation are simultaneously removed by mechanical mechanical polishing (CMP) or dry or wet etching. A fifth step of flattening the surface is included. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102406977-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102420673-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043677-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I664677-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101926294-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220043416-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107431016-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170009183-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016158697-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016158697-A1 |
| priorityDate | 2009-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 849.