| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_20d3042eb4ea7c9afd525aa89373349d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-442 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-442
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G81-024 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-442
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 |
| filingDate |
2015-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0de39b592ff7dcf44097708d152afd6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91abe2fc428f5843ee7668162434d100
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4957fba5b08d5953cbf17a419e55180
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9431e37e472d9b726aecbf012b5d8782 |
| publicationDate |
2016-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160134667-A |
| titleOfInvention |
Resist material for oxygen plasma etching, resist film, and laminate using same |
| abstract |
(A) having a polysiloxane segment (a1) having a silanol group and / or a hydrolyzable silyl group and a vinyl-based polymer segment (a2), wherein the structural unit represented by the formula (1) and / or the formula (2) Wherein the resist material for oxygen plasma etching has a silicon atom content of 15 to 45 wt% in the total solid content of the resist composition for oxygen plasma etching. |
| priorityDate |
2014-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |