| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c860b8fd00c1a2bba904b5087980fc53 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-5237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-3262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2015-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a20f1b8d491cb6ca102b6842d63e8a30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47e298b095c318d2f33d927408661324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02c7a0030614b3dc53c520dda0187c71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d32982f4e3047f15b8e3dc7d9a494b40 |
| publicationDate |
2016-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160039542-A |
| titleOfInvention |
Electronic device, manufacturing method thereof, manufacturing apparatus thereof |
| abstract |
An electronic device capable of preventing deterioration in performance is provided. The TFT 21 has a channel 14 composed of an IGZO film and an etching stopper film 22 adjacent to the channel 14 and a channel 14 formed between the channel 14 and the etching stopper film 22 The passivation film 23 is composed of a fluorine-containing silicon nitride film and the concentration of fluorine atoms at the boundary between the etching stopper film 22 and the channel 14 is higher than that of the channel 14 Is higher than the concentration of fluorine atoms in the portion other than the boundary and the concentration distribution of the fluorine atoms in the portions other than the boundary of the etching stopper film 22 is lowered toward the boundary. |
| priorityDate |
2014-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |