http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5454727-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-428 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate | 2013-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-5454727-B1 |
| titleOfInvention | Method for manufacturing thin film transistor |
| abstract | PROBLEM TO BE SOLVED: To prevent an excessive temperature rise of a film constituting a thin film transistor at the time of excimer laser light irradiation in a self-alignment process. A diffusion prevention film is formed on a substrate that transmits an excimer laser beam, a gate electrode and a gate insulating film are formed thereon, and an oxide semiconductor layer is formed thereon. The structure 14a is irradiated with excimer laser light 16 from the substrate 2 side, and the gate electrode 6 is used as a mask, and the excimer laser is applied to regions outside the region corresponding to the gate electrode 6 of the oxide semiconductor layer 10. The resistance is reduced by irradiating light 16, and one of the outer regions is a source region 18 and the other is a drain region 19. The diffusion preventing film 4 is composed of a fluorinated silicon nitride film (SiN: F) containing fluorine in the silicon nitride film. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9947550-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101973233-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160039542-A |
| priorityDate | 2013-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.