| abstract |
Provided are a thin film transistor substrate having a high charge mobility and capable of obtaining uniform electrical characteristics for a large area display device and a method of manufacturing the same. The thin film transistor substrate includes an oxide semiconductor layer formed on an insulating substrate and having a channel portion, a gate electrode formed to overlap the oxide semiconductor layer, a gate insulating film interposed between the oxide semiconductor layer and the gate electrode, an oxide semiconductor layer and a gate electrode. It includes a protective film formed on the upper. Here, at least one of the gate insulating film and the protective film contains fluorine-based silicon. |