| abstract |
The series-connected transistor structure includes a first source, a first channel-drain structure, a second channel-drain structure, a gate dielectric layer, a gate, a first drain pad, and a second drain pad. The first source is on the substrate. The first channel-drain structure is above the first source and includes a first channel and a first drain on the first channel. The second channel-drain structure is over a first source, substantially parallel to the first channel-drain structure, and includes a second channel and a second drain over the second channel. A gate dielectric layer surrounds the first channel and the second channel. The gate surrounds the gate dielectric layer. The first drain pad is above and in contact with the first drain. The second drain pad is above and in contact with the second drain, and the first drain pad and the second drain pad are separated from each other. |