| abstract |
Methods for doping fin-shaped channel regions of partially fabricated three-dimensional transistors on a semiconductor substrate are disclosed herein. These methods include forming a multi-layered dopant-containing film on a semiconductor substrate, forming a capping film comprising a silicon carbide material, a silicon nitride material, a silicon carbonitride material, or a combination thereof, Forming a capping film so that the film is positioned between the semiconductor substrate and the capping film; And moving the dopant from the dopant-containing film into the fin-shaped channel region. A plurality of dopant-containing layers in the dopant-containing film are formed by an atomic layer deposition process, and the atomic layer deposition process is performed such that the dopant-containing film precursor forms an adsorption-limited layer on the semiconductor substrate Lt; RTI ID = 0.0 > dopant-containing < / RTI > film precursor to a semiconductor substrate, and reacting the adsorbed dopant-containing film precursor. Also disclosed is a multi-station substrate processing apparatus for doping a fin-shaped channel region of a partially fabricated three-dimensional transistor. |