| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2014-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa70862fdb19aa7b23eb104e048510a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_084259bcac48307cf7a5808e49717143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8c783b16b86542476b0b0e7656951a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_134ef480093f9ff2f74266a66253e2b6 |
| publicationDate |
2014-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140097034-A |
| titleOfInvention |
Film forming method and film forming apparatus |
| abstract |
The present invention provides a film forming method capable of improving the oxygen concentration and the carbon concentration in a thin film, thereby lowering the relative dielectric constant and improving the etching resistance. The film forming method according to the present invention is a film forming method in which at least silicon (Si) and oxygen (O) are deposited on a surface of an object to be processed in a processing container made of a silane-based gas, a hydrocarbon gas, a nitriding gas and an oxidizing gas, And a SiOCN layer containing carbon (C) and nitrogen (N), the method comprising: a first step of forming a first film containing at least Si and C and N; And a second step of forming a second film containing O is performed in one cycle. Thereby, the oxygen concentration and the carbon concentration in the thin film are also improved to lower the relative dielectric constant and improve the etching resistance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190124509-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180061499-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170077596-A |
| priorityDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |