| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d51b723a2d8eb04c7a282a4cc006b70a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4583
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-677 |
| filingDate |
2016-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e3f45c91a1f01e036c1ea84899ec4f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a362289c6d414130343cc8fbf12d571
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83f934ef2cc0c25ffa1798055bb59636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db5476f3fc670d97ec53a36622e23efc |
| publicationDate |
2018-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180061499-A |
| titleOfInvention |
Method of forming Thin film using Low Temperature Plasma Enhanced Chemical Vapor Deposition |
| abstract |
A thin film deposition method using a plasma method includes loading a substrate on a susceptor disposed in a process chamber, supplying a first process gas and a second process gas into the process chamber through a gas injection unit provided on the process chamber A method of manufacturing a plasma processing apparatus, comprising the steps of: generating a plasma to deposit a thin film; supplying the first and second process gases and pumping the process chamber while the plasma generation is stopped; And a plasma processing step for generating a plasma in the process chamber while maintaining the supply of the second process gas to remove the first process gas remaining in the process chamber, . |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200069411-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200063063-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200006422-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11396704-B2 |
| priorityDate |
2016-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |