| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2012-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5279bc0ae1450de664f316da3f097499
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c30dd6795bae3f17bdd0a1a1a59104a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_accd4d5e65d72db9467b128a18777a33 |
| publicationDate |
2014-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140015421-A |
| titleOfInvention |
Reduced pattern loading with silicon oxide multilayers |
| abstract |
Aspects of the present disclosure relate to methods of depositing conformal silicon oxide multilayers on patterned substrates. Conformal silicon oxide multilayers are each formed by depositing multiple sublayers. Sublayers are deposited by flowing bis (diethylamino) silane (BDEAS) and an oxygen containing precursor into the processing chamber so that a relatively uniform dielectric growth rate is achieved over the patterned substrate surface. Plasma treatment may occur following the formation of sublayers to further improve conformality and reduce the wet etch rate of the conformal silicon oxide multilayer film. The deposition of conformal silicon oxide multilayers grown in accordance with embodiments has a reduced dependency on pattern density while still adequate for non-sacrificial applications. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10373821-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180097142-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016093564-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11735412-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180116455-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180116456-A |
| priorityDate |
2011-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |