| abstract |
The present invention relates to an etching composition comprising a silyl phosphate compound, phosphoric acid and deionized water, and a method of manufacturing a semiconductor device including an etching process using the same. Since the etching composition according to the present invention has a high etching selectivity ratio of the nitride film to the oxide film, the etching of the oxide film can be minimized, thereby easily controlling the EFH. In addition, by using the etching composition of the present invention, it is possible to prevent the deterioration of the electrical properties due to the damage of the oxide film or the electrical properties due to the etching of the oxide film when the nitride film is removed, and to prevent the generation of particles, thereby to secure process stability and improve device characteristics. . |